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Part #: DU28200M
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:TE CONNECTIVITY LTD
Description:RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
DU28200M SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 65.0000000000000000 |
| Drain Current-Max (ID) (A) | 20.0000000000000000 |
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