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Part #: DMT35M8LDG-13
ActivePart Category:Power Field-Effect Transistors
Manufacturer:DIODES INC
Description:Power Field-Effect Transistor, 17A I(D), 30V, 0.0057ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DMT35M8LDG-13 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 29.0000000000000000 |
| Case Connection | DRAIN SOURCE |
| Configuration | SERIES CONNECTED, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
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