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Part #: DMT10H010LSS-13
ActivePart Category:Power Field-Effect Transistors
Manufacturer:DIODES INC
Description:Power Field-Effect Transistor, 11.5A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DMT10H010LSS-13 SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 61.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
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