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DF650R17IE4BOSA1 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: DF650R17IE4BOSA1
OtherPart Category:Insulated Gate Bipolar Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel
DF650R17IE4BOSA1 SPECIFICATIONS
| Status | Unknown |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) (A) | 930.0000000000000000 |
| Collector-emitter Voltage-Max (V) | 1700.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
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