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Part #: CP666
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-5
CP666 SPECIFICATIONS
| Status | Transferred |
| Case Connection | GATE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 50.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.2000000000000000 |
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