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Part #: CMPDM3590
OtherPart Category:Power Field-Effect Transistors
Manufacturer:CENTRAL SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 0.16A I(D), 20V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CMPDM3590 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1600000000000000 |
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Equivalent Parts: Part #CMPDM3590
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