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Part #: CLY5E6327
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
CLY5E6327 SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 9.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.2000000000000000 |
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