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Part #: CJD02N60
OtherPart Category:Power Field-Effect Transistors
Manufacturer:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Description:Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
CJD02N60 SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 20.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
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Equivalent Parts: Part #CJD02N60
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