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Part #: CJCD2003
OtherPart Category:Power Field-Effect Transistors
Manufacturer:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD
Description:Power Field-Effect Transistor, 12A I(D), 18V, 0.0105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CJCD2003 SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | DRAIN |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 18.0000000000000000 |
| Drain Current-Max (ID) (A) | 12.0000000000000000 |
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