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Part #: CGHV59070P
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:M/A-COM TECHNOLOGY SOLUTIONS INC
Description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CGHV59070P SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.3000000000000000 |
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