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Part #: CGHV1J006D
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:WOLFSPEED INC
Description:RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CGHV1J006D SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.8000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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