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Part #: CGH55030P2
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:WOLFSPEED INC
Description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CGH55030P2 SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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