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Part #: CG2H40035F
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:WOLFSPEED INC
Description:RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
CG2H40035F SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 84.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.5000000000000000 |
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