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Part #: CEB730G
OtherPart Category:Power Field-Effect Transistors
Manufacturer:CHINO-EXCEL TECHNOLOGY CO LTD
Description:Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
CEB730G SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.5000000000000000 |
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