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Part #: CAB011A12GM3T
ActivePart Category:Power Field-Effect Transistors
Manufacturer:WOLFSPEED INC
Description:Power Field-Effect Transistor, 1200V, 0.0139ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
CAB011A12GM3T SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0139000000000000 |
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