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Part #: CAB006M12GM3
ActivePart Category:Power Field-Effect Transistors
Manufacturer:WOLFSPEED INC
Description:Power Field-Effect Transistor, 200A I(D), 1200V, 0.0069ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
CAB006M12GM3 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 200.0000000000000000 |
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