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Part #: BUZ76
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Description:Power Field-Effect Transistor, 3A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ76 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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BUZ76 Datasheet & Equivalents - NEW JERSEY SEMICONDUCTOR PRODUCTS INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #BUZ76
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