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Part #: BUZ61A
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 11A I(D), 400V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ61A SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 570.0000000000000000 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
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