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Part #: BUZ325
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
BUZ325 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 670.0000000000000000 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 12.5000000000000000 |
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