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Part #: BUZ312
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SEMICONDUCTOR TECHNOLOGY INC
Description:Power Field-Effect Transistor, 6A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
BUZ312 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.5000000000000000 |
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