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Part #: BUZ312
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 6A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
BUZ312 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 830.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
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BUZ312 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.com