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BUK9Y65-100E Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: BUK9Y65-100E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 19A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
BUK9Y65-100E SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 25.3000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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