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BUK9MTT-65PBB Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: BUK9MTT-65PBB
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 3.8A I(D), 65V, 0.1115ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-013AC
BUK9MTT-65PBB SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 0.0360000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
| DS Breakdown Voltage-Min (V) | 65.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.8000000000000000 |
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