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BUK7K29-100E Datasheet - NXP SEMICONDUCTORS - Datasheets360.comPart #: BUK7K29-100E
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 29.5A I(D), 100V, 0.0245ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
BUK7K29-100E SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 83 |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100 |
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