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BUK6Y12-30P Datasheet - NEXPERIA - Datasheets360.comPart #: BUK6Y12-30P
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 67A I(D), 30V, 0.012ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-235
BUK6Y12-30P SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 4.4 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30 |
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