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BTS3160D Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: BTS3160D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
BTS3160D SPECIFICATIONS
| Status | Active |
| Additional Feature | ESD PROTECTED |
| Avalanche Energy Rating (Eas) (mJ) | 300.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) (A) | 7.8000000000000000 |
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