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Part #: BTS129
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 27A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BTS129 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 27.0000000000000000 |
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