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Part #: BST124
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Power Field-Effect Transistor, 0.45A I(D), 250V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126
BST124 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.4500000000000000 |
| Drain-source On Resistance-Max (ohm) | 12.0000000000000000 |
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