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BSS229 Datasheet - SIEMENS A G - Datasheets360.comPart #: BSS229
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Small Signal Field-Effect Transistor, 0.07A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
BSS229 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0700000000000000 |
| Drain-source On Resistance-Max (ohm) | 100.0000000000000000 |
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