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Part #: BSS145E6327
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Small Signal Field-Effect Transistor, 0.22A I(D), 65V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSS145E6327 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 65.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.2200000000000000 |
| Drain-source On Resistance-Max (ohm) | 3.5000000000000000 |
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