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Part #: BSP125
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 0.11A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP125 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1100000000000000 |
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