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Part #: BSM692F
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 9A I(D), 1000V, 1.25ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSM692F SPECIFICATIONS
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.0000000000000000 |
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