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Part #: BSM254F
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SIEMENS A G
Description:Power Field-Effect Transistor, 35A I(D), 500V, 0.17ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSM254F SPECIFICATIONS
| Status | Discontinued |
| Case Connection | ISOLATED |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 35.0000000000000000 |
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BSM254F Datasheet & Equivalents - SIEMENS A G - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #BSM254F
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