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Part #: BSM120D12P2C005
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ROHM CO LTD
Description:Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
BSM120D12P2C005 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 120.0000000000000000 |
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