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Part #: BSL308PE
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TAIWAN VBSEMI ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
BSL308PE SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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