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Part #: BSH114
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH114 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.8500000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.5000000000000000 |
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