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Part #: BSH103BKR
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 1A I(D), 30V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH103BKR SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2700000000000000 |
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