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Part #: BLF989
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:AMPLEON NETHERLANDS B V
Description:RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BLF989 SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | SOURCE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 108.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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