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Part #: BLF888BS
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:RESURGENT SEMICONDUCTOR LLC
Description:RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BLF888BS SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 104.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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