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Part #: BLF368
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:ASI SEMICONDUCTOR INC
Description:RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BLF368 SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| DS Breakdown Voltage-Min (V) | 70.0000000000000000 |
| Drain Current-Max (ID) (A) | 27.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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