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Part #: BLF0510H6600P
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
BLF0510H6600P SPECIFICATIONS
| Status | Discontinued |
| Case Connection | SOURCE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 110.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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