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Part #: BLA6H1011-600
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:NXP SEMICONDUCTORS
Description:RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
BLA6H1011-600 SPECIFICATIONS
| Status | Transferred |
| Case Connection | SOURCE |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 72.0000000000000000 |
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