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BL350N04D Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL350N04D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 20A I(D), 40V, 0.035ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
BL350N04D SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE : 80 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
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