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Part #: BL3470
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 1.3A I(D), 100V, 0.32ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
BL3470 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.3000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3200000000000000 |
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