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BL3415 Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL3415
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 4A I(D), 20V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BL3415 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 5.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
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