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BL260P04D Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: BL260P04D
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 35A I(D), 40V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
BL260P04D SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | TUBE : 80 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 35.0000000000000000 |
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