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Part #: BL250N06TI
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 27A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
BL250N06TI SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 9.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 27.0000000000000000 |
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