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Part #: BL2311
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 4.2A I(D), 20V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BL2311 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0530000000000000 |
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BL2311 Datasheet & Equivalents - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #BL2311
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