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Part #: BL2302G
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 2.8A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BL2302G SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.8000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0450000000000000 |
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