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Part #: BL10N10I
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 10A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
BL10N10I SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1500000000000000 |
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